The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Jun. 14, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Winfried Bakalski, Munich, DE;
Hans Taddiken, Munich, DE;
Nikolay Ilkov, Munich, DE;
Herbert Kebinger, Mettenheim, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/161 (2013.01); H03K 17/6871 (2013.01); H03K 2217/0018 (2013.01);
Abstract
A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.