The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Jun. 04, 2013
Applicant:

Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;

Inventors:

Atsushi Sugiyama, Hamamatsu, JP;

Naota Akikusa, Hamamatsu, JP;

Tadataka Edamura, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/34 (2006.01); H01S 5/028 (2006.01); B82Y 20/00 (2011.01); H01S 5/12 (2006.01); H01S 5/14 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3401 (2013.01); B82Y 20/00 (2013.01); H01S 5/028 (2013.01); H01S 5/3402 (2013.01); H01S 5/0071 (2013.01); H01S 5/0282 (2013.01); H01S 5/0287 (2013.01); H01S 5/12 (2013.01); H01S 5/141 (2013.01);
Abstract

A quantum cascade laser includes a semiconductor substrate, and an active layer that is provided on the substrate, and has a cascade structure in which emission layers and injection layers are alternately laminated by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, the active layer generates light by intersubband transition in a quantum well structure. Further, in a laser cavity structure for light with a predetermined wavelength to be generated in the active layer, reflection control films including at least one layer of CeOfilm are formed on a first end face and a second end face facing each other. Thereby, it is possible to realize a quantum cascade laser capable of preferably realizing reflectance control for light within a mid-infrared wavelength region on the laser device end face.


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