The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Sep. 03, 2010
Applicants:
Claire Thoumazet, Paris, FR;
Fabrice Abbott, Vienne, FR;
Fabienne P. Piroux, Compiegne, FR;
Inventors:
Assignee:
SAINT-GOBAIN PERFORMANCE PLASTICS CORPORATION, Aurora, OH (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/52 (2006.01); C23C 16/02 (2006.01); C23C 16/34 (2006.01); G02B 1/10 (2015.01); G02B 1/115 (2015.01); H01L 31/048 (2014.01);
U.S. Cl.
CPC ...
H01L 51/5256 (2013.01); C23C 16/0245 (2013.01); C23C 16/345 (2013.01); G02B 1/105 (2013.01); G02B 1/115 (2013.01); H01L 31/048 (2013.01); H01L 51/5281 (2013.01); Y02E 10/50 (2013.01);
Abstract
This layered element () for encapsulating an element () that is sensitive to air and/or moisture, especially an element that collects or emits radiation such as a photovoltaic cell or an organic light-emitting diode, comprises a polymer layer () and a barrier layer () against at least one face (A) of the polymer layer. The barrier layer () has a moisture vapor transfer rate of less than 10g/mper day and consists of a multilayer of at least two thin hydrogenated silicon nitride layers () having alternately lower and higher densities.