The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Jan. 07, 2014
Applicant:
Snu R&db Foundation, Seoul, KR;
Inventors:
Changhee Lee, Seoul, KR;
Kookheon Char, Seoul, KR;
Seonghoon Lee, Seoul, KR;
Donggu Lee, Seoul, KR;
Jaehoon Lim, Seoul, KR;
Jiyun Song, Seoul, KR;
Assignee:
SNU R&DB FOUNDATION, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 51/42 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 51/426 (2013.01); B82Y 40/00 (2013.01);
Abstract
An exemplary method of manufacturing a light-absorbing layer and a method of manufacturing a semiconductor device including the same light-absorbing layer are provided. The exemplary method includes: forming a nanoparticles film by applying a semiconductor nanoparticles solution on a substrate; thermally treating the nanoparticles film at least one time to cause adhesion among the nanoparticles; and forming a light-absorbing layer by applying a light-absorbing solution on the nanoparticles film.