The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Jan. 09, 2014
Applicants:
Lg Innotek Co., Ltd., Seoul, KR;
Lg Electronics Inc., Seoul, KR;
Inventors:
Assignees:
LG INNOTEK CO., LTD., Seoul, KR;
LG ELECTRONICS INC., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/46 (2010.01); H01L 33/48 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 33/20 (2010.01); H01L 33/40 (2010.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 33/405 (2013.01); H01L 33/48 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/0079 (2013.01); H01L 33/22 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0083 (2013.01); Y10S 438/977 (2013.01);
Abstract
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.