The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Dec. 16, 2011
Applicants:

Lee Spencer Riley, Outlane, GB;

Ze Rui Chen, Fremont, CA (US);

Inventors:

Lee Spencer Riley, Outlane, GB;

Ze Rui Chen, Fremont, CA (US);

Assignee:

Diodes Incorporated, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/861 (2013.01); H01L 29/6609 (2013.01); H01L 21/04 (2013.01); H01L 29/0619 (2013.01); H01L 29/407 (2013.01); H01L 29/8725 (2013.01);
Abstract

A method for forming a rectifier device is provided. The method forms a first layer on a substrate, a second layer is formed on the first layer and a photoresist layer is deposited on the second layer in which a plurality of trench patterns are formed. A plurality of trenches are formed in the first layer and the second layer by etching based on the trench patterns in the photoresist. The method then laterally etches the second layer to expose a corner portion of the first layer at mesas formed in between the two trenches. A portion of the second layer is preserved at an edge of the rectifier device.


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