The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Nov. 20, 2013
Tomonari Sawada, Toyota, JP;
Tomonari Sawada, Toyota, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A semiconductor device includes: a semiconductor substrate having a drift layer of a first conductivity type, a body layer of a second conductivity type formed on a surface of the drift layer, and a source layer formed on a portion of a surface of the body layer; a gate insulation film formed on an inner wall of a trench that extends from the surface of the semiconductor substrate through the source layer and the body layer to the drift layer; and a gate electrode housed in the trench and covered with the gate insulation film, the gate electrode including, in a region located at a drift layer side of a boundary between the body and drift layers, at least one first semiconductor layer of the first conductivity type and at least one second semiconductor layer of the second conductivity type that are alternately disposed and joined to each other.