The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Dec. 03, 2012
Applicant:

New Japan Radio Co., Ltd., Tokyo, JP;

Inventor:

Yoshio Fujii, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02697 (2013.01); H01L 24/05 (2013.01); H01L 24/48 (2013.01); H01L 24/45 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/4847 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48458 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/10272 (2013.01);
Abstract

An aluminum material can be used on a surface of the electrode of a semiconductor element, this aluminum layer need not be formed thick unnecessarily, a copper wire is bonded strongly to the semiconductor element irrespective of a diameter of the wire, and high heat resistance can be achieved. Silicon carbide (SiC) is used as a substrate of the semiconductor element, the titanium layerand the aluminum layerare formed as the electrodeon the silicon carbide substrate, and by a ball bonding or a wedge bonding of the copper wireto the aluminum layerof the electrodewhile applying ultrasonic wave, the copper-aluminum compound layer(AlCu, AlCu or the like) is formed between the copper wireand the titanium layer


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