The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Nov. 18, 2013
Applicants:

Aledia, Grenoble, FR;

Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Emilie Pougeoise, Grenoble, FR;

Amelie Dussaigne, Bizonnes, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 31/0352 (2006.01); H01L 33/00 (2010.01); H01L 33/18 (2010.01); H01L 31/18 (2006.01); B82Y 40/00 (2011.01); H01L 33/08 (2010.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 29/0657 (2013.01); H01L 21/0254 (2013.01); H01L 21/0259 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02387 (2013.01); H01L 21/02439 (2013.01); H01L 21/02458 (2013.01); H01L 21/02603 (2013.01); H01L 21/02617 (2013.01); H01L 21/02645 (2013.01); H01L 29/068 (2013.01); H01L 29/0673 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 31/035227 (2013.01); H01L 31/184 (2013.01); H01L 31/1852 (2013.01); H01L 33/007 (2013.01); H01L 33/18 (2013.01); B82Y 40/00 (2013.01); H01L 33/08 (2013.01); H01L 33/24 (2013.01);
Abstract

An optoelectric device including microwires or nanowires on a support, each microwire or nanowire including at least one portion mainly containing a III-V compound in contact with the support, wherein the III-V compound is based on a first group-V element and on a second group-III element, wherein a surface of the support includes first areas of a first material promoting the growth of the III-V compound according to the polarity of the first element distributed in a second area of a second material promoting the growth of the compound according to the polarity of the second element, the microwires or nanowires being located on the first areas.


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