The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Feb. 27, 2012
Applicant:

Masanobu Kitada, Kyoto, JP;

Inventor:

Masanobu Kitada, Kyoto, JP;

Assignee:

KYOCERA CORPORATION, Kyoto-Shi, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/04 (2006.01); H01L 29/02 (2006.01); H01L 21/20 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/04 (2013.01); H01L 21/02433 (2013.01); H01L 21/2007 (2013.01); H01L 29/02 (2013.01);
Abstract

A composite substrate having silicon substrate with excellent crystallinity and a method of manufacturing the composite substrate and an electronic component using the composite substrate are provided. A composite substrate () is configured to bond a support substrate () having electrical insulating property, and a silicon substrate () which is overlaid on the support substrate (). The semiconductor substrate () of the composite substrate () includes a plurality of first regions () in which a device function unit functioning as a semiconductor device is formed, and a second region () located between these first regions (). In the semiconductor substrate () of the composite substrate (), an amorphous form () containing silicon and a metal is present in the second region ().


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