The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Nov. 10, 2014
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 27/146 (2006.01); H01L 27/108 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14812 (2013.01); H01L 27/14609 (2013.01); H01L 27/14614 (2013.01); H01L 27/14641 (2013.01); H01L 27/14887 (2013.01); H01L 27/10876 (2013.01); H01L 27/14831 (2013.01); H01L 29/1091 (2013.01); H01L 29/42396 (2013.01);
Abstract
The performance of a semiconductor device is improved by preventing 1/f noise from being generated in a peripheral transistor, in the case where the occupation area of photodiodes, which are included in each of a plurality of pixels that form an image pickup device, is expanded. In the semiconductor device, the gate electrode of an amplification transistor is formed by both a gate electrode part over an active region and a large width part that covers the boundary between the active region and an element isolation region and the active region near the boundary and that has a gate length larger than that of the gate electrode part.