The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Apr. 02, 2014
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Jeong-Ho Lee, Yongin, KR;
Su-Yeon Sim, Yongin, KR;
Ju-Won Yoon, Yongin, KR;
Seung-Min Lee, Yongin, KR;
Wang-Woo Lee, Yongin, KR;
Il-Jeong Lee, Yongin, KR;
Jung-Kyu Lee, Yongin, KR;
Choong-Youl Im, Yongin, KR;
Samsung Display Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.