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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9245896 B1

PDFFull Text
Date of Patent:
Jan. 26, 2016

Filed:

Feb. 14, 2014

Junction field-effect floating gate quantum dot memory switch

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ali Afzali-Ardakani, Ossining, NY (US);

Tze-Chiang Chen, Yorktown Heights, NY (US);

Kailash Gopalakrishnan, San Jose, CA (US);

Wilfried Ernst-August Haensch, Somers, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Louis J. Percello

Otterstedt, Ellenbogen & Krammer, LLP

Primary Examiner:

Tan N Tran

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 29/788 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); Y10S 977/84 (2013.01); Y10S 977/943 (2013.01);
Abstract

A dense binary memory switch device combines the function of a pass transistor and a memory cell and has low programming and operation voltages. The device includes a charge storage region coupled to a gate electrode through a gate dielectric layer and to a channel region through another dielectric layer. The charge storage region is charged by carriers injected from injection regions that are in direct contact with the charge storage region. Fabrication of the device at low temperatures compatible with back-end-of-line processing is further disclosed.

Find Patent Forward Citations

Afzali-Ardakani, Ali. (2016). Junction field-effect floating gate quantum dot memory switch (U.S. Patent No. 9245896). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9245896

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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