The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Sep. 29, 2012
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Luca Petruzzi, Goedersdorf, AT;

Bernhard Auer, Millstatt, AT;

Paolo Del Croce, Villach, AT;

Markus Ladurner, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 27/02 (2006.01); H03K 17/0814 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 27/0248 (2013.01); H01L 29/42368 (2013.01); H01L 29/7813 (2013.01); H01L 2924/0002 (2013.01); H03K 17/08142 (2013.01);
Abstract

A semiconductor device is disclosed. In accordance with a first aspect of the present invention the device includes a semiconductor chip having a substrate, a first supply terminal electrically coupled to the substrate to provide a first supply potential (V) and a load current to the substrate, and a second supply terminal operably provided with a second supply potential. A first vertical transistor is integrated in the semiconductor chip and electrically coupled between the supply terminal and an output terminal. The first vertical transistor is configured to provide a current path for the load current to the output terminal in accordance with a control signal, which is provided to a gate electrode of the first vertical transistor.


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