The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Jul. 12, 2013
Applicant:
Xilinx, Inc., San Jose, CA (US);
Inventors:
John K. Jennings, Dublin, IE;
Ionut C. Cical, Dublin, IE;
Assignee:
XILINX, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H03K 17/06 (2006.01); H03K 17/0812 (2006.01); H03K 17/693 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 29/78 (2013.01); H03K 17/06 (2013.01); H03K 17/08122 (2013.01); H03K 17/693 (2013.01); H03K 2017/066 (2013.01); H03K 2217/0054 (2013.01);
Abstract
Devices for isolating an input from an output are disclosed. For example, a device includes a first p-type metal oxide semiconductor transistor and a first circuit. A source of the first p-type metal oxide semiconductor transistor is connected to an input of the device. The first circuit is for delivering a signal on the input of the device to a gate of the first p-type metal oxide semiconductor transistor when an enable signal is deactivated and for delivering a ground voltage to the gate of the first p-type metal oxide semiconductor transistor when the enable signal is activated.