The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Mar. 17, 2009
Applicants:

Woo Tag Kang, San Diego, CA (US);

Jonghae Kim, San Diego, CA (US);

Jungwon Suh, San Diego, CA (US);

Inventors:

Woo Tag Kang, San Diego, CA (US);

Jonghae Kim, San Diego, CA (US);

Jungwon Suh, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/08 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0805 (2013.01); G06F 17/5068 (2013.01); H01L 28/40 (2013.01); Y10T 29/49117 (2015.01);
Abstract

Methods and devices of a capacitor in a semiconductor device having an increased capacitance are disclosed. In a particular embodiment, a method of forming a capacitor is disclosed. A section of a first insulating material between a first metal contact element and a second metal contact element is removed to form a channel. A second insulating material is deposited in the channel between the first metal contact element and the second metal contact element.


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