The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Mar. 31, 2015
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Simon Y S Chang, Plano, TX (US);

Thomas W. Lassiter, Garland, TX (US);

Jamie T. Stapleton, Dallas, TX (US);

Maciej Blasiak, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 23/00 (2006.01); H01L 21/3065 (2006.01); B81C 1/00 (2006.01); B81B 7/00 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); B81B 7/0058 (2013.01); B81C 1/00531 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 29/0692 (2013.01);
Abstract

Methods and apparatus for forming structures to reduce wafer warpage. A method includes providing a semiconductor wafer having a plurality of integrated circuits; providing a photomask defining a plurality of cavities to be formed by an etch on a backside surface of the semiconductor wafer; defining structural support areas for the backside surface, the structural support areas being contiguous areas; providing areas on the photomask that correspond to the structural support areas, the structural support areas being areas that are not to be etched; using the photomask, performing an etch on the backside surface of the semiconductor wafer to form the cavities by removing semiconductor material from the backside surface of the semiconductor wafer; and the structural supports on the backside of the semiconductor wafer formed as areas that are not subjected to the etch. Additional methods and apparatus are also disclosed.


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