The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9245851 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 26, 2016

Filed:

Jul. 10, 2014
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Mutsuo Nishikawa, Matsumoto, JP;

Yuko Fujimoto, Shiojiri, JP;

Kazuhiro Matsunami, Masumoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/76895 (2013.01); H01L 23/528 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device has a plurality of first opening portions formed in an interlayer insulating film. The surface is covered with a metal film with a surface having concavities and convexities which scatter reflected light. Size of the first opening portion is of the same level as a contact hole of a component and cannot be recognized by an image recognition apparatus. The metal film can be recognized by the image recognition apparatus. By forming a TiN film serving as a reflection prevention film on an end of the metal film, portions that can easily scatter light and a portion that cannot easily reflect light are adjacent in an alignment marker. A passivation film is formed on the interlayer insulating film and the TiN film. Recessed portions disposed in the metal film are exposed to a second opening portion formed in the passivation film and the TiN film.


Find Patent Forward Citations

Nishikawa, Mutsuo. (2016). Semiconductor device and method of manufacturing semiconductor device (U.S. Patent No. 9245851). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9245851

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