The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Aug. 14, 2013
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Christian Zenz, Graz, AU;

Hartmut Buenning, Norderstedt, DE;

Leonardus Antonius Elisabeth Van Gemert, Nijmegen, NL;

Tonny Kamphuis, Lent, NL;

Sascha Moeller, Hamburg, DE;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/82 (2006.01); H01L 21/782 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 23/488 (2006.01); H01L 21/50 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 29/06 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/782 (2013.01); H01L 21/50 (2013.01); H01L 21/56 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/6836 (2013.01); H01L 23/31 (2013.01); H01L 23/3178 (2013.01); H01L 23/488 (2013.01); H01L 23/49816 (2013.01); H01L 29/0657 (2013.01); H01L 24/11 (2013.01); H01L 2221/68336 (2013.01); H01L 2221/68377 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01);
Abstract

Consistent with an example embodiment, there is a semiconductor device, with an active device having a front-side surface and a backside surface; the semiconductor device of an overall thickness, comprises an active device with circuitry defined on the front-side surface, the front-side surface having an area. The back-side of the active device has recesses f a partial depth of the active device thickness and a width of about the partial depth, the recesses surrounding the active device at vertical edges. There is a protective layer of a thickness on to the backside surface of the active device, the protective material having an area greater than the first area and having a stand-off distance. The vertical edges have the protective layer filling the recesses flush with the vertical edges. A stand-off distance of the protective material is a function of the semiconductor device thickness and the tangent of an angle (θ) of tooling impact upon a vertical face the semiconductor device.


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