The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Jul. 14, 2014
Atomic Energy Council-institute of Nuclear Energy Research, Taoyuan County, TW;
Wei-Yang Ma, Taoyuan County, TW;
Chien-Chang Chao, Taoyuan County, TW;
Guan-Lin Chen, Taoyuan County, TW;
Tsun-Neng Yang, Taoyuan County, TW;
Atomic Energy Council-Institute of Nuclear Energy Research, Taoyuan County, TW;
Abstract
A method for fabricating a silicon-doped or boron-doped aluminum electrode is revealed. Aluminum target or aluminum paste prepared by selectively doped with silicon and/or boron is arranged at a silicon wafer with a passivation layer by physical deposition or screen printing. Then the doped aluminum layer is melted in linear or dot pattern to pass through the passivation layer and contact with the silicon wafer. Thus contact resistance between an aluminum back electrode and the silicon wafer of crystalline silicon solar cells is reduced and acceptor concentration on a surface layer of the silicon wafer is increased. Therefore the process speed is faster and the energy conversion efficiency of the solar cell is improved.