The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Jun. 14, 2013
Shindengen Electric Manufacturing Co., Ltd., Chiyoda-ku, Tokyo, JP;
Yusuke Fukuda, Hanno, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes the steps of: forming a semiconductor layer on a first main surface of a semiconductor substrate made of crystals having a wide band gap; forming lattice defects on a second main surface on a side opposite to the first main surface of the semiconductor substrate; and emitting a laser beam having a longer wavelength than an absorption edge wavelength which is a wavelength of a light having the lowest energy which the crystals absorb, to a lower surface of the semiconductor substrate after the step of forming the lattice defects; and forming an electrode on the second main surface of the semiconductor substrate after the step of emitting the laser beam.