The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
May. 01, 2014
International Business Machines Corporation, Armonk, NY (US);
Can Bayram, Ossining, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method for releasing a semiconductor layer with a reduced active area from a base substrate is provided. A patterned release layer is first formed between a semiconductor layer comprised of an III-V compound semiconductor material and formed by a lateral epitaxial overgrowth technique and a base substrate. The patterned release layer is in contact with a Group III nitride surface. The patterned release layer is composed of a material having a lower fracture toughness than that of the III-V compound semiconductor material and that of the base substrate so that a crack will initiate in the pattern release layer during the controlled spalling process. The semiconductor layer is released from the underlying base substrate along a spalling plane located at a portion of the semiconductor layer enclosing the patterned release layer and the base substrate.