The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Jun. 30, 2014
Applicant:
Chengdu Monolithic Power Systems Co., Ltd., Chengdu, CN;
Inventors:
Eric Braun, Mountain View, CA (US);
Da Chen, Sichuan, CN;
Assignee:
Chengdu Monolithic Power Systems Co., Ltd., Chengdu, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/10 (2006.01); G11C 17/00 (2006.01); G11C 7/06 (2006.01); G11C 17/18 (2006.01); G11C 17/16 (2006.01); G11C 7/08 (2006.01); H01L 27/112 (2006.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
G11C 17/18 (2013.01); G11C 17/16 (2013.01); G11C 7/065 (2013.01); G11C 7/08 (2013.01); H01L 27/105 (2013.01); H01L 27/112 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An OTP memory cell and an OTP memory circuit. The OTP memory cell having a memory module, a write module, a read module, and a load module. Data may be written into the memory module once the write module is active; and data may be read out of the memory module once the read module is active. The OTP memory cell may also have a first latch module and a second latch module.