The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Jun. 04, 2014
Applicant:

Nvidia Corporation, Santa Clara, CA (US);

Inventors:

Mahmut Ersin Sinangil, Medford, MA (US);

John W. Poulton, Chapel Hill, NC (US);

Brucek Kurdo Khailany, Austin, TX (US);

John H. Edmondson, Arlington, MA (US);

Assignee:

NVIDIA Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/16 (2006.01); G11C 7/10 (2006.01); G11C 8/08 (2006.01);
U.S. Cl.
CPC ...
G11C 7/106 (2013.01); G11C 8/08 (2013.01);
Abstract

A system and device are provided for implementing memory arrays using high-density latch cells. The device includes an array of cells arranged into columns and rows. Each cell comprises a latch cell that includes a transmission gate, a pair of inverters, and an output buffer. Each row of latch cells is connected to at least one common node for addressing the row of latch cells, and each column of latch cells is connected to a particular bit of an input signal and a particular bit of an output signal. A register file may be implemented using one or more arrays of the high-density latch cells to replace any or all of the banks of SRAM cells typically used to implement the register file.


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