The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Sep. 17, 2013
Applicant:

Sandisk Enterprise Ip Llc, Milpitas, CA (US);

Inventors:

Navneeth Kankani, Fremont, CA (US);

Charles See Yeung Kwong, Redwood City, CA (US);

Assignee:

SANDISK ENTERPRISE IP LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 11/00 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1008 (2013.01);
Abstract

The various implementations described herein include systems, methods and/or devices that may enhance the reliability with which data can be stored in and read from a memory. The method includes obtaining symbol transition information corresponding to symbol read errors identified while reading data from flash memory cells in a flash memory device. The method further includes determining a reading threshold voltage offset, based at least in part on: a plurality of probability values determined from the symbol transition information; a current count of program-erase cycles; and a word line zone value for a word line zone containing the flash memory cells. Additionally, the method includes generating an updated reading threshold voltage in accordance with the reading threshold voltage offset and the current value of the reading threshold voltage.


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