The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
May. 11, 2012
Tomokazu Ogomi, Tokyo, JP;
Hiroyuki Asano, Tokyo, JP;
Toshiaki Shoji, Tokyo, JP;
Takeshi Musha, Tokyo, JP;
Jin Inoue, Tokyo, JP;
Masaaki Okada, Tokyo, JP;
Miki Kagano, Tokyo, JP;
Kazuya Makabe, Tokyo, JP;
Kenji Shimohata, Tokyo, JP;
Takeshi Kishimoto, Tokyo, JP;
Tomokazu Ogomi, Tokyo, JP;
Hiroyuki Asano, Tokyo, JP;
Toshiaki Shoji, Tokyo, JP;
Takeshi Musha, Tokyo, JP;
Jin Inoue, Tokyo, JP;
Masaaki Okada, Tokyo, JP;
Miki Kagano, Tokyo, JP;
Kazuya Makabe, Tokyo, JP;
Kenji Shimohata, Tokyo, JP;
Takeshi Kishimoto, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A magnetic sensor device includes a first magnet and a second magnet that are disposed on mutually opposing sides of a conveyance path, and one of poles of the first magnet faces an opposite pole of the second magnet. The first magnet and the second magnet generate a cross magnetic field whose strength in a spacing direction, which is orthogonal to a conveying direction, is within a predetermined range. An AMR element is located in a magnetic field in which the strength of the cross magnetic field in the spacing direction is within a predetermined range, and detects, as change in a resistance value, change in the cross magnetic field caused by an object to be detected. A multilayer board outputs the change in the resistance value detected by the AMR element to a processing circuit.