The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Feb. 12, 2014
Nano and Advanced Materials Institute Limited, Hong Kong, HK;
Kam Piu Ho, HK, HK;
Paul Kwok Keung Ho, HK, HK;
Man Wah Liu, HK, HK;
Ranshi Wang, HK, HK;
Wai Chun Luk, HK, HK;
Wing Ho Choi, HK, HK;
Fulin Zheng, HK, HK;
Kwong Chau Kwok, HK, HK;
Mei Mei Hsu, HK, HK;
Ivan Ka Yu Lau, HK, HK;
NANO AND ADVANCED MATERIALS INSTITUTE LIMITED, Hong Kong, HK;
Abstract
The present invention describes a method of producing a p-type light-absorbing semiconductor copper zinc tin selenide/sulfide (Cu(ZnSn)(SSe)) (abbreviated CZTS) with electrochemical deposition. It can be used in the production of solar cell when combined with an n-type inorganic or an organic semiconductor layer. The present method comprises a one-step or a sequence of depositions using electroplating to fabricate a low-cost and large-area CZTS solar cell, without using expensive and complicated deposition techniques or highly toxic and flammable chemicals in the production process. The present method significantly reduces the cost and energy requirement for production of solar cell.