The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2016

Filed:

Feb. 27, 2013
Applicant:

Japan Science and Technology Agency, Kawaguchi-shi, Saitama, JP;

Inventors:

Yutaka Majima, Yokohama, JP;

Toshiharu Teranishi, Uji, JP;

Kazuhiko Matsumoto, Ibaraki, JP;

Kenzo Maehashi, Ibaraki, JP;

Yasuo Azuma, Yokohama, JP;

Yasuhide Ohno, Ibaraki, JP;

Kosuke Maeda, Yokohama, JP;

Guillaume Hackenberger, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); H01L 27/088 (2006.01); H01L 27/06 (2006.01); B82Y 10/00 (2011.01); H01L 27/04 (2006.01); H01L 29/66 (2006.01); H01L 21/822 (2006.01); H01L 49/00 (2006.01); H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0512 (2013.01); B82Y 10/00 (2013.10); H01L 21/8221 (2013.01); H01L 27/04 (2013.01); H01L 27/0611 (2013.01); H01L 27/0688 (2013.01); H01L 27/088 (2013.01); H01L 29/66477 (2013.01); H01L 49/006 (2013.01); H01L 51/102 (2013.01); H01L 2251/10 (2013.01);
Abstract

This invention is to provide a nanodevice, which is combined with an electronic device such as a diode, tunnel device and MOS transistor, integrated circuit and manufacturing method of the nanodevice. A nanodevice includes: a first insulating layer; one electrodeA and the other electrodeB provided to have a nanogap on the first insulating layer; a metal nanoparticle or a functional molecule provided between the one electrodeA and the other electrodeB; a second insulating layerprovided on the first insulating layer, and on the one electrodeA and the other electrodeB to embed the metal nanoparticle or the functional molecule. The second insulating layer works as a passivating layer.


Find Patent Forward Citations

Loading…