The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Apr. 24, 2013
Sae Woo Nam, Boulder, CO (US);
Burm Baek, Lafayette, CO (US);
Francesco Marsilli, Pasadena, CA (US);
Varun Verma, Boulder, CO (US);
Sae Woo Nam, Boulder, CO (US);
Burm Baek, Lafayette, CO (US);
Francesco Marsilli, Pasadena, CA (US);
Varun Verma, Boulder, CO (US);
National Institute of Standards and Technology, Gaithersburg, MD (US);
Abstract
A superconducting nanowire single photon detector (SN-SPD) microelectronic circuit is described which has higher quantum efficiency and signal-to-noise than any SN-SPD's known in the art. The material and configuration of the microelectronic circuit eliminates the polarization dependence and shows improved signal-to-noise over SN-SPD microelectronic circuits known in the art. The higher efficiency, polarization independence, and high signal-to-noise is achieved by vertically stacking two tungsten-silicide (TS) SN-SPDs and electrically connecting them in parallel. This structure forms a multilayer superconducting nanowire avalanche photo-detector (SNAP). A single photon detection device employing the multilayer (SNAP) microelectronic circuit demonstrates a peak system detection efficiency of 87.7% and a polarization dependence of less than 2%. This represents nearly an order of magnitude improvement in both system detection efficiency and reduction of polarization dependence compared to conventional SNSPDs.