The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2016

Filed:

Dec. 22, 2014
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Naoya Ushiyama, Fukuoka-ken, JP;

Gen Watari, Fukuoka-ken, JP;

Masanobu Ando, Fukuoka-ken, JP;

Tetsuro Komatsu, Fukuoka-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/50 (2010.01); H01L 33/48 (2010.01); H01L 33/54 (2010.01);
U.S. Cl.
CPC ...
H01L 33/508 (2013.01); H01L 33/486 (2013.01); H01L 33/50 (2013.01); H01L 33/504 (2013.01); H01L 33/507 (2013.01); H01L 33/54 (2013.01); H01L 33/505 (2013.01); H01L 2224/13 (2013.01);
Abstract

A semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.


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