The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Sep. 11, 2014
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Natalie Fellows DeMille, Carlsbad, CA (US);
Steven P. DenBaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/50 (2010.01); H01L 33/22 (2010.01); H01L 33/44 (2010.01); H01L 33/58 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/505 (2013.01); H01L 33/0075 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01); H01L 33/508 (2013.01); H01L 33/58 (2013.01); H01L 33/62 (2013.01); H01L 33/507 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0066 (2013.01); H01L 2933/0091 (2013.01);
Abstract
This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.