The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Jul. 21, 2014
Applicant:
Lextar Electronics Corporation, Hsinchu, TW;
Inventors:
Po-Yang Chang, Taipei, TW;
Tzu-Hung Chou, Zhongli, TW;
Assignee:
LEXTAR ELECTRONICS CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/26 (2010.01); H01L 31/0224 (2006.01); H01M 4/46 (2006.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 31/022433 (2013.01); H01M 4/463 (2013.01); H01L 33/26 (2013.01);
Abstract
An electrode structure includes a first diffusion barrier layer, an aluminum reflective layer formed over the first diffusion barrier layer. The aluminum reflective layer has a thickness from about 500 angstroms (Å) to less than 2,000 Å, a second diffusion barrier layer formed over the aluminum reflective layer, and an electrode layer overlying the second diffusion barrier layer. The electrode structure is applicable in a light emitting diode device.