The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Jul. 14, 2014
Sungchul Kim, Hwaseong-si, KR;
Hyoungsoo Ko, Hwaseong-si, KR;
Wonjoo Kim, Hwaseong-si, KR;
Jung Bin Yun, Hwaseong-si, KR;
Kwang-min Lee, Seoul, KR;
Sungchul Kim, Hwaseong-si, KR;
Hyoungsoo Ko, Hwaseong-si, KR;
Wonjoo Kim, Hwaseong-si, KR;
Jung Bin Yun, Hwaseong-si, KR;
Kwang-Min Lee, Seoul, KR;
Abstract
Provided is an image sensor including a semiconductor substrate having a trench and having a first conductivity type, a photoelectric conversion layer formed in the semiconductor substrate below the trench to have a second conductivity type, first and second transfer gate electrodes provided in the trench covered with a gate insulating layer, a first charge-detection layer formed in the semiconductor substrate adjacent to the first transfer gate electrode, and a second charge-detection layer formed in the semiconductor substrate adjacent to the second transfer gate electrode.