The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2016

Filed:

Jan. 05, 2015
Applicant:

Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;

Inventors:

Hirofumi Yoshikawa, Osaka, JP;

Makoto Izumi, Osaka, JP;

Yasutaka Kuzumoto, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 31/035218 (2013.01); H01L 31/035236 (2013.01); B82Y 30/00 (2013.01); Y10S 977/774 (2013.01); Y10S 977/948 (2013.01);
Abstract

A light receiving element includes a p-type semiconductor layer, an n-type semiconductor layer, and a first and a second superlattice semiconductor layers, and the first and the second superlattice semiconductor layers each have a superlattice structure in which a barrier layer and a quantum dot layer are alternately and repeatedly stacked. A band structure of the superlattice structure of the first superlattice semiconductor layer is a type I structure, and that of the second superlattice semiconductor layer is a type II structure. The superlattice structures of the first and the second superlattice semiconductor layers each form a superlattice miniband, and a conduction band first superlattice miniband of the superlattice structure of the second superlattice semiconductor layer is lower in lower and energy than a conduction band first superlattice miniband of the superlattice structure of the first superlattice semiconductor layer.


Find Patent Forward Citations

Loading…