The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Jun. 26, 2012
Kazuatsu Ito, Osaka, JP;
Hidehito Kitakado, Osaka, JP;
Kazuatsu Ito, Osaka, JP;
Hidehito Kitakado, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka, JP;
Abstract
A semiconductor device (A) has an oxide semiconductor layer (). The oxide semiconductor layer () has a channel region (), and a source region () and drain region () positioned on respective sides of the channel region (). The source region () has a low-resistance source region () that has a lower resistance than the channel region (), and the drain region () has a low-resistance drain region () that has a lower resistance than the channel region (). The carrier concentrations of the low-resistance source region () and the low-resistance drain region () become progressively lower from a connecting portion between a source electrode () and the low-resistance source region () and a connecting portion between a drain electrode () and the low-resistance drain region () towards the channel region ().