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H01L 21/00 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 27/32 (2006.01); H01L 21/02 (2006.01);

U.S. Cl.

CPC ...

H01L 29/7869 (2013.01); H01L 29/4908 (2013.01); H01L 29/786 (2013.01); H01L 21/02565 (2013.01); H01L 27/1222 (2013.01); H01L 27/1251 (2013.01); H01L 27/3244 (2013.01); H01L 27/3262 (2013.01); H01L 29/41733 (2013.01); H01L 29/78618 (2013.01);

Abstract

A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cmto have stable electrical property.

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