The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Mar. 24, 2014
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Tony Vanhoucke, Bierbeek, BE;
Viet Thanh Dinh, Heverlee, BE;
Anco Heringa, Waalre, NL;
Dirk Klaassen, Waalre, NL;
Evelyne Gridelet, Omal, BE;
Jan Willem Slotboom, Eersel, NL;
Assignee:
NXP, B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 29/737 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/08 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/737 (2013.01); H01L 29/0821 (2013.01); H01L 29/402 (2013.01); H01L 29/6628 (2013.01); H01L 29/66242 (2013.01); H01L 29/739 (2013.01); H01L 29/7327 (2013.01); H01L 29/0649 (2013.01); H01L 29/0692 (2013.01); H01L 29/1004 (2013.01); H01L 29/205 (2013.01); H01L 29/407 (2013.01);
Abstract
A semiconductor device and a method of making the same. The device includes a semiconductor substrate. The device also includes a bipolar transistor on the semiconductor substrate. The bipolar transistor includes an emitter. The bipolar transistor also includes a base located above the emitter. The bipolar transistor further includes a laterally extending collector located above the base. The collector includes a portion that extends past an edge of the base.