The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Jul. 01, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 21/764 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 29/165 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01);
Abstract
A method for fabricating a semiconductor device comprises forming a dummy gate pattern and a spacer that is arranged on a sidewall of the dummy gate pattern on a substrate, forming an air gap on both sides of the dummy gate pattern by removing the spacer, exposing the substrate by removing the dummy gate pattern, and sequentially forming a gate insulating film including a high-k insulating film and a metal gate electrode on the exposed substrate.