The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Jul. 03, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jun-Suk Kim, Goyang-si, KR;
Kee-Moon Chun, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 29/6681 (2013.01); H01L 29/66681 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01J 37/32669 (2013.01); H01L 29/7854 (2013.01);
Abstract
Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming preliminary trenches adjacent opposing sides of an active region. The method includes forming etching selection regions in portions of the active region that are exposed after forming the preliminary trenches. The method includes forming trenches by removing the etching selection regions. Moreover, the method includes forming a stressor in the trenches. Related apparatuses are also provided.