The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Feb. 12, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 23/62 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/47 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0804 (2013.01); H01L 29/0619 (2013.01); H01L 29/1095 (2013.01); H01L 29/401 (2013.01); H01L 29/47 (2013.01); H01L 29/7397 (2013.01);
Abstract
A semiconductor device includes a semiconductor body including a drift zone of a first conductivity type, an emitter region of a second, complementary conductivity type configured to inject charge carriers into the drift zone, and an emitter electrode. The emitter electrode includes a metal silicide layer in direct ohmic contact with the emitter region. A net impurity concentration in a portion of the emitter region directly adjoining the metal silicide layer is at most 1×10cm.