The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2016

Filed:

Mar. 15, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Seung-Hyun Song, Hwasung-si, KR;

Seung-Chul Lee, Seongnam-si, KR;

In-Kook Jang, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 27/11 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823412 (2013.01);
Abstract

Integrated circuit device with transistors having different threshold voltages and methods of forming the device are provided. The device may include the first, second and third transistors having threshold voltages different from each other. The first transistor may be free of a stacking fault and the second transistor may include a stacking fault. The concentration of the channel implant region of the third transistor may be different from the concentration of the channel implant region of the first transistor.


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