The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2016

Filed:

Oct. 11, 2013
Applicant:

Soitec, Crolles Cedex, FR;

Inventors:

Yves-Matthieu Le Vaillant, Crolles, FR;

Etienne Navarro, Grenoble, FR;

Assignee:

SOITEC, Bernin, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/46 (2006.01); H01L 21/30 (2006.01); H01L 21/762 (2006.01); H01L 21/20 (2006.01); H01L 23/538 (2006.01); H01L 29/06 (2006.01); H01L 41/053 (2006.01); H01L 41/187 (2006.01); H01L 41/33 (2013.01);
U.S. Cl.
CPC ...
H01L 21/76251 (2013.01); H01L 21/2007 (2013.01); H01L 23/5387 (2013.01); H01L 29/0657 (2013.01); H01L 29/0692 (2013.01); H01L 41/053 (2013.01); H01L 41/187 (2013.01); H01L 41/33 (2013.01);
Abstract

This process comprises steps of: a) providing a first substrate comprising the active layer made of a first material of Young's modulus Eand of thickness h; b) providing a second substrate made of a second material of Young's modulus Eand of thickness h; c) bending the first substrate and the second substrate such that they each have a curved shape of a radius of curvature R; d) joining the second substrate to the active layer such that the second substrate closely follows the shape of the first substrate; and e) re-establishing the initial at-rest shape of the second substrate, the process being noteworthy in that the second material of the second substrate is a flexible material respecting the relationship E/E<10, in that the thickness of the second substrate respects the relationship h/h≧10, and in that the radius of curvature respects the relationship


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