The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2016

Filed:

Mar. 27, 2013
Applicant:

Applied Physics Technologies, Inc., McMinnville, OR (US);

Inventors:

William A. Mackie, McMinnville, OR (US);

Gerald G. Magera, Hillsboro, OR (US);

Assignee:

Applied Physics Technologies, Inc., McMinnville, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 1/14 (2006.01); H01J 1/146 (2006.01); H01J 19/10 (2006.01); H01J 1/148 (2006.01);
U.S. Cl.
CPC ...
H01J 19/10 (2013.01); H01J 1/14 (2013.01); H01J 1/146 (2013.01); H01J 1/148 (2013.01); H01J 2201/196 (2013.01); H01J 2201/2889 (2013.01); H01J 2201/30484 (2013.01); H01J 2201/317 (2013.01);
Abstract

An electron source is made from mixed-metal carbide materials of high refractory nature. Producing field-enhanced thermionic emission, i.e., thermal-field or extended Schottky emission, from these materials entails the use of a certain low work function crystallographic direction, such as, for example, (100), (210), and (310). These materials do not naturally facet because of their refractory nature. The disclosed electron source made from transition metal carbide material is especially useful when installed in a scanning electron microscope (SEM) performing advanced imaging applications that require a high brightness, high beam current source.


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