The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Sep. 02, 2010
Hiroaki Misawa, Sapporo, JP;
Yoshiaki Nishijima, Sapporo, JP;
Kosei Ueno, Sapporo, JP;
Kei Murakoshi, Sapporo, JP;
Hiroaki Misawa, Sapporo, JP;
Yoshiaki Nishijima, Sapporo, JP;
Kosei Ueno, Sapporo, JP;
Kei Murakoshi, Sapporo, JP;
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY, Sapporo-shi, JP;
Abstract
The present invention has an object to provide a photoelectric conversion device which can be manufactured through a simple manufacturing process, achieve photoelectric conversion over a wide range of wavelength regions, and attain high photoelectric conversion efficiency even in the infrared wavelength region, a photodetection device, and a photodetection method. This photoelectric conversion deviceincludes a substratecontaining single crystalline titanium dioxide, adhesion layersformed on a surfaceof the substrate, metal microstructure bodies, each of which has a volume of 1,000 nmor more and 3,000,000 nmor less, arranged at predetermined intervals in a predetermined direction on surfaces of the adhesion layers, a containerfor containing an electrolyte solution L in an arrangement region of the metal microstructure bodieson the surfaceof the substrate, a conductive layerformed on a rear surfaceof the substrate, and a counter electrodein contact with the electrolyte solution L in the container; and the metal microstructure bodiesadhere onto the substratethrough the adhesion layers, a Schottky barrier is formed at an interface of the substratewith the metal microstructure bodies, and photoelectric conversion is carried out for light in an infrared region by utilizing a plasmon resonance phenomenon.