The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Nov. 02, 2011
Applicant:
Tokuaki Kuniyoshi, Osaka, JP;
Inventor:
Tokuaki Kuniyoshi, Osaka, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1362 (2006.01); G02F 1/1333 (2006.01); G02F 1/1368 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
G02F 1/133345 (2013.01); G02F 1/1368 (2013.01); G02F 1/136209 (2013.01); H01L 29/66765 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); H01L 29/78669 (2013.01); G02F 2001/136231 (2013.01); G02F 2201/34 (2013.01); G02F 2203/02 (2013.01); G02F 2203/055 (2013.01);
Abstract
A thin film transistor substrate () includes an insulating substrate (), a semiconductor layer () provided on the insulating substrate () and having a channel region (C), and a channel protection layer () provided in the channel region (C). The channel protection layer () is made of a multilayer film in which first insulating films and second insulating films are alternately layered. A relationship between a refractive index Ra of the first insulating film and a refractive index Rb of the second insulating film is Rb/Ra≧1.3.