The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2016

Filed:

Aug. 04, 2011
Applicants:

Keisuke Yasuda, Toyota, JP;

Yuji Sugino, Nishio, JP;

Inventors:

Keisuke Yasuda, Toyota, JP;

Yuji Sugino, Nishio, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/40 (2006.01); B23K 1/14 (2006.01); B23K 1/005 (2006.01); B23K 26/32 (2014.01); B23K 26/20 (2014.01); B23K 1/00 (2006.01); B23K 1/20 (2006.01); H01L 23/373 (2006.01); H01L 23/473 (2006.01); F28F 3/00 (2006.01); H05K 7/20 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
B23K 26/20 (2013.01); B23K 1/0012 (2013.01); B23K 1/0016 (2013.01); B23K 1/20 (2013.01); B23K 26/244 (2015.10); B23K 26/32 (2013.01); F28F 3/00 (2013.01); H01L 23/3735 (2013.01); H01L 23/473 (2013.01); H05K 7/20254 (2013.01); H05K 7/20927 (2013.01); B23K 2201/14 (2013.01); B23K 2201/42 (2013.01); B23K 2203/50 (2015.10); H01L 24/32 (2013.01); H01L 2224/32225 (2013.01);
Abstract

In this brazing method, which brazes an insulating substrate and a top plate that configure an HV inverter cooler, the insulating substrate is disposed on the top plate with a brazing material layer therebetween, and then, by means of laser irradiation, laser welding is performed at an arbitrary plurality of positions at the joining section between the top plate and the insulating substrate, thus provisionally affixing the insulating substrate to the top plate. Thereafter, by means of heating and melting the brazing material layer, the insulating substrate is brazed onto the top plate with the plurality of laser-welded positions as the brazing start points. After brazing, a power semiconductor is joined onto the insulating substrate corresponding to the center portion of the region surrounded by the plurality of brazing start points.


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