The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Jul. 03, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Hyo-Sang Youn, Hwaseong-si, KR;
Woo-Seok Kim, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03B 1/00 (2006.01); H03K 3/00 (2006.01); H03K 19/0175 (2006.01); H02M 3/158 (2006.01); H02M 3/155 (2006.01);
U.S. Cl.
CPC ...
H03K 19/017509 (2013.01); H02M 3/158 (2013.01); H02M 3/155 (2013.01);
Abstract
A circuit for driving a gate of a power MOS transistor includes an adaptive pull-up unit and an adaptive pull-down unit. The adaptive pull-up unit is connected between a first power source voltage and the gate of the power MOS transistor. The adaptive pull-up unit maximizes pull-up current driving ability. The adaptive pull-down unit is connected between a second power source voltage and the gate of the power MOS transistor. The adaptive pull-down unit maximizes pull-down current driving ability.