The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Dec. 28, 2012
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Jun Zhu, Beijing, CN;
Hao-Su Zhang, Beijing, CN;
Zhen-Dong Zhu, Beijing, CN;
Qun-Qing Li, Beijing, CN;
Guo-Fan Jin, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. The substrate is removed to form an exposed surface. A first electrode is applied to cover the entire exposed surface of the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile