The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Jul. 30, 2014
Applicant:

Nichia Corporation, Anan-shi, JP;

Inventors:

Akiyoshi Kinouchi, Komatsushima, JP;

Ryohei Hirose, Anan, JP;

Hirofumi Nogami, Katsuura-gun, JP;

Assignee:

NICHIA CORPORATION, Anan-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 51/52 (2006.01); H01L 33/20 (2010.01); H01L 33/46 (2010.01); H01L 33/60 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 33/46 (2013.01); H01L 33/0025 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/40 (2013.01); H01L 33/60 (2013.01); H01L 51/5268 (2013.01);
Abstract

A semiconductor light emitting element in which changes in light distribution characteristics due to inclination angle of side surfaces are suppressed. The semiconductor light emitting element includes a semiconductor structure having a light extracting surface as its upper surface; a reflecting layer disposed on side surfaces of the semiconductor structure; and a positive electrode and a negative electrode disposed on a lower surface of the semiconductor structure. Side surfaces of the semiconductor structure are inclined, expanding upward from the lower surface to the upper surface. At least a portion of each side surface includes a plurality of protrusions, a plurality of recesses, or a combination thereof.


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