The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Dec. 30, 2013
Applicant:

Hyundai Motor Company, Seoul, KR;

Inventors:

Jong Seok Lee, Suwon, KR;

Kyoung-Kook Hong, Hwaseong, KR;

Dae Hwan Chun, Gwangmyung-si Gyeonggi-Do, KR;

Youngkyun Jung, Seoul, KR;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 29/6606 (2013.01); H01L 29/66143 (2013.01); H01L 29/0619 (2013.01); H01L 29/0661 (2013.01); H01L 29/1608 (2013.01);
Abstract

A Schottky barrier diode and a method of manufacturing the Schottky barrier diode are provided. The diode includes an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and having an upper surface, a lower surface, and an inclined surface that connects the upper surface and the lower surface. A p region is disposed on the inclined surface of the n− type epitaxial layer and a Schottky electrode is disposed on the upper surface of the n− type epitaxial layer and the p region. In addition, an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate.


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